Part Number Hot Search : 
710AS NC7NZ04 NCP15 NCP15 NCP15 VTT7123 Z102X NCP15
Product Description
Full Text Search
 

To Download MJE1320 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE1320
DESCRIPTION With TO-220 package High voltage Low collector saturation voltage APPLICATIONS For high-voltage ,power switching in inductive circuits and line operated switchmode applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg
Collector-base voltage

PARAMETER
INC
Collector-emitter voltage
Emitter-base voltage
ANG H
E SEM
Open base
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 1800 900 9 2 5 1.5 2.5
UNIT V V V A A A A W ae ae
Open collector
Collector current Collector current-Peak
Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae TC=100ae
80 32 -65~150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA; IB=0. IC=1A ;IB=0.5A TC=100ae IC=2A ;IB=1A IC=1A ;IB=0.5A TC=100ae IC=2A ;IB=1A VCEV=RatedValue;VBE(off)=1.5V TC=100ae VEB=9V; IC=0 IC=2A ; VCE=5V IC=1A ; VCE=5V 2.5 3 MIN 900
MJE1320
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 COB
TYP.
MAX
UNIT V
0.18 0.3 0.3 0.2 0.15 0.9
1.0 1.5 2.5 1.5 1.5 2.8 0.25 2.5 0.25
V V V V mA mA
DC current gain

Collector outoput capacitance
Switching times resistive load,Duty CycleU td tr ts tf Delay time Rise time
INC
E SEM ANG H
2%,tp=25|I s
IE=0 ; VCB=10V;f=1.0MHz
OND IC
TOR UC
80 pF 0.1 0.8 |I |I |I |I s s s s
VCC=250V; IC=1A IB1=IB2=0.5A Storage time Fall time 4.0 0.8
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE1320

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.10mm)
3


▲Up To Search▲   

 
Price & Availability of MJE1320

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X